Shenyang Academy of Instrumentation Science Co., Ltd.  

Product Name: Diffusion Silicon Pressure Sensor Chips Model NO.: HB-2103 Customized: Non-Customized Certification: ISO Measuring Medium: Gas & Liquid Wiring Type: Four-Wire Thread Type: None Material: Silicon Wafer Production Process: Normal Wirewound Output Signal Type: Analog Type For: Diffused Silicon Pressure Transmitter Component: SemiConductor Type Type: Piezoresistive Pressure Sensor Sensor Size: 15mm*24mm (Common Type) Sensing Distance: 200mm-900mm (Adjustable) Output Voltage: DC 3.9V-6V Output Pulse Width: 35ms Operation Consumption: <60ua Overall Power Consumption: <0.5W Life Cycle: 500, 000 Flush Times Flushing Duration: 3s-23s (Adjustable) Function: Installed in Faucet, Urinal Flusher, Toilet Flushe National Patent: Zl2007200068368 Trademark: HB Transport Package: Anti-Static Bag Specification: ISO9001 Origin: Shenyang, China HS Code: 9026900000 Product Description In 1961, Shenyang Academy of Instrumentation Science started to research and manufacture silicon piezoresistive wafers. With excellent technology and well educated employees, we become the market leader in China for piezoresistive die.We establish our reputation for cost-effective and quality. The pressure dies have been employed in pressure transducers widely in the world.Features:Self-intellectual property and manufacture workmanship silicon Micromachining4"Silicon wafer workmanship flow and controllable workmanship in batch production, various rangesTiny size structure, high consistency and economical wholesale priceHigh accuracylong stability and reliabilityNo.ItemSpecifications01Nominal ScaleGauge pressureAbsolute Pressure35KPa,100KPa,250KPa, 600KPa,1MPa,1.6MPa,2.5MPa100KPa,250KPa,600KPa, 1MPa,1.6MPa,2.5MPa,6MPa, 10MPa,25MPa,40MPa,60MPa02Offset≤30mV@1mA03Span Output≥30mA(≤35KPa) ; ≥60mV (other scale)04Nonlinearity±0.25%F.S.05Power Supply1 mADC (typical), 5V (optional)06Zero Temperature Coefficient ±0.1%F.S./ ºC07Sensitivity Temperature Coefficient±0.1%F.S./ ºC (≤35KPa) ±0.05%F.S./ ºC (other scale)08Overload Capacity2 times scale(≤10MPa);1.5times scale(>10MPa)09Bridge Resistance5 (1±20%) KΩ10Operating Temperature-45ºC ~ +100ºC11Short Term Stability±0.05%F.S./8h12Chip Size(um)2700×3450Notes1.Calculating method of nonlinearity is the Least Squares Method.2.Short Term Stability is tested under 25ºC,5VDC.3.Other results are attained with the reference temperature 25ºC,1mADC.4.Silicon wafer thickness c=400um,glass thickness d=800um